Near-infrared absorption enhancement in microstructured silicon by Ag film deposition

被引：6
|
作者：
Wang, Yanchao [1 ]
Gao, Jinsong [1 ,2 ]
Yang, Haigui [2 ]
Wang, Xiaoyi [2 ]
机构：
[1] Univ Chinese Acad Sci, Beijing 100039, Peoples R China
[2] Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, Key Lab Opt Syst Adv Mfg Technol, Changchun 130033, Peoples R China
来源：
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2016年 / 27卷 / 09期
基金：
中国国家自然科学基金;
关键词：
Surface Plasmon Resonance; Infrared Absorption; Laser Fluence; Microstructure Surface; Absorption Enhancement;
D O I：
10.1007/s10854-016-4932-4
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We investigate the influence of spike-like microstructures formed on the silicon surface via fs-laser scanning with different-size on its near-infrared absorption from 1200 to 2500 nm. Although the infrared absorption of the small size microstructures is obviously lower than the large size, it can be further improved to 90 % by a large amount of random and irregular Ag nano particles from a subsequent deposition of Ag thin film. The origins of absorption enhancement are discussed and theoretically analyzed in detail.
引用
收藏
页码：9002 / 9007
页数：6
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