Concurrent NBTI and Hot-Carrier Degradation in p-Channel MuGFETs

被引：2
|
作者：
Kim, Tae Ha [1 ]
Yu, Chong Gun [1 ]
Park, Jong Tae [1 ]
机构：
[1] Univ Incheon, Dept Elect Engn, Inchon 402749, South Korea
来源：
IEEE ELECTRON DEVICE LETTERS | 2011年 / 32卷 / 03期
关键词：
Hot carriers (HCs); multiple-gate MOSFET; negative-bias temperature instability (NBTI); silicon-on-insulator technology; FLOATING-BODY; MECHANISM; STRESS; BIAS;
D O I：
10.1109/LED.2010.2103296
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The experimental investigations on the concurrent negative-bias temperature instability (NBTI) and hot-carrier (HC) degradation in p-channel MuGFETs have been performed with different side-surface orientations and fin widths. The observed result of the enhanced HC degradation at elevated temperature is due to the interaction between NBTI and HC degradations. The enhanced concurrent effects for 0 degrees rotated fin body, which has (100) of top surface and (110) of side surface, could be explained by NBTI induced HC degradation. The enhanced concurrent effects with an increase of fin width could be explained by self-heating-induced the enhanced NBTI degradation.
引用
收藏
页码：294 / 296
页数：3
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