Development of a Nonperiodic Boundary Practical Simulator for Oxide and Shallow Trench Isolation Chemical Mechanical Polishing Processes

被引：1

作者：

Ohtake, Atsushi ^{[1
]}

Arai, Toshiyuki ^{[2
]}

Kurokawa, Syuhei ^{[3
]}

Doi, Toshiro ^{[3
]}

机构：

[1] Hitachi Ltd, Ibaraki 3161292, Japan

[2] Renesas Elect Corp, Tokyo 1000004, Japan

[3] Kyushu Univ, Fukuoka 8190395, Japan

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2011年 / 158卷 / 02期

关键词：

D O I：

10.1149/1.3519133

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

We developed a fast simulator for the chemical mechanical polishing (CMP) process that works in nonperiodic boundary conditions. Since periodic boundary conditions are not used, it can calculate anywhere on a wafer, such as the wafer's edge. Additionally, we enhanced the simulator to calculate the shallow trench isolation (STI)-CMP process. In the STI-CMP simulation method, additionally required simulation parameters are only one, under the assumption that dishing reaches steady state in enough short time relative to total polishing time. We found that the simulation results could match experimental film thicknesses with an error range of about 10-20 nm and that the calculation time was reduced to 1/20 relative to when the acceleration method was not introduced. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3519133] All rights reserved.

引用

页码：H142 / H145

页数：4

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