Control methods for the chemical-mechanical polishing process in shallow trench isolation

被引：1

作者：

Wu, YT ^{[1
]}

Gilhooly, J ^{[1
]}

Philips, B ^{[1
]}

机构：

[1] IBM, Microelect Div, Essex Junction, VT 05452 USA

来源：

ASMC 98 PROCEEDINGS - 1998 IEEE/SEMI ADVANCED SEMICONDUCTOR MANUFACTURING CONFERENCE AND WORKSHOP: THEME - SEMICONDUCTOR MANUFACTURING: MEETING THE CHALLENGES OF THE GLOBAL MARKETPLACE | 1998年

关键词：

D O I：

10.1109/ASMC.1998.731396

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Process control of shallow trench isolation (STI) chemical-mechanical polishing (CMP) strongly relies on thickness measurements of various films. The control scheme based on send-ahead (SAHD) wafers with a fixed post-CMP target has low cost, but it neglects the process variations before and during STI CMP. An "interactive" control method, based on extensive measurements, compensates for much of the variations coming in to STI CMP, and eliminates the problem of underpolishing. However, this method comes with a high cost for multiple measurement steps. This paper compares the fixed-target planarization to the interactive STI control methodology.

引用

页码：66 / 70

页数：5

共 50 条

[1] Control of microscratches in chemical-mechanical polishing process for shallow trench isolation
Samsung Electronics Co, Ltd, Kyongki-do, Korea, Republic of
Jpn J Appl Phys Part 1 Regul Pap Short Note Rev Pap, 11 (5849-5853):
[2] Control of microscratches in chemical-mechanical polishing process for shallow trench isolation
Park, H
Kim, KB
Hong, CK
Chung, UI
Lee, MY
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1998, 37 (11): : 5849 - 5853
[3] Chemical-mechanical polishing for shallow trench isolation: A new interpretation
Sun, HJ
Olewine, M
Wall, R
CHEMICAL MECHANICAL PLANARIZATION IN IC DEVICE MANUFACTURING III, PROCEEDINGS, 2000, 99 (37): : 3 - 10
[4] Effects of underlying films on the chemical-mechanical polishing for shallow trench isolation technology
Natl Chiao-Tung Univ, Hsin-chu, Taiwan
Thin Solid Films, (543-549):
[5] Effects of underlying films on the chemical-mechanical polishing for shallow trench isolation technology
Wang, YL
Liu, C
Feng, MS
Dun, JW
Chou, KS
THIN SOLID FILMS, 1997, 308 : 543 - 549
[6] Dummy-feature placement for chemical-mechanical polishing uniformity in a shallow-trench isolation process
Tian, RQ
Tang, XP
Wong, MDF
IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 2002, 21 (01) : 63 - 71
[7] Photoresist chemical mechanical polishing for shallow trench isolation
Itoh, A
Imai, M
Arimoto, K
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (4A): : 1697 - 1700
[8] Photoresist chemical mechanical polishing for shallow trench isolation
Itoh, Akio
Imai, Masahiko
Arimoto, Yoshihiro
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1998, 37 (4 A): : 1697 - 1700
[9] Effects of calcination and milling process conditions for ceria slurry on shallow-trench-isolation chemical-mechanical polishing performance
Kim, Jun-Seok
Kang, Hyun-Goo
Kanemoto, Manabu
Paik, Ungyu
Park, Jea-Gun
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2007, 46 (12): : 7671 - 7677
[10] Effects of calcination and milling process conditions for ceria slurry on shallow-trench-isolation chemical-mechanical polishing performance
Kim, Jun-Seok
Kang, Hyun-Goo
Kanemoto, Manabu
Paik, Ungyu
Park, Jea-Gun
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2007, 46 (12): : 7671 - 7677

← 1 2 3 4 5 →