Processing effects on electrical properties of diamond-like carbon

被引:0
|
作者
Wu, RLC
Lanter, WC
Wrbanek, J
Kosel, PB
DeJoseph, CA
机构
[1] K Syst Corp, Beavercreek, OH 45432 USA
[2] Univ Cincinnati, Dept Elect & Comp Engn, Cincinnati, OH 45221 USA
[3] USAF, Res Lab, Wright Patterson AFB, OH 45433 USA
来源
关键词
diamond-like carbon; ion beam technique; capacitor;
D O I
暂无
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Diamond-like carbon (DLC) films for electronic applications were deposited by a direct ion beam technique. A systematically study was carried out on the effect of the variation of processing parameters on the electrical properties of DLC films. The processing parameters investigated included the source gas mixture compositions of CH4/H-2, CH4/Ar, CH4/H2Ar, CH4/O-2, and CH4/N-2, the RF discharge power (80 to 250 W), ion deposition energy (200 eV to 1500 eV), and the substrate material (semiconductor, metals and insulators). The source gas mixture and ion deposition energy were found to be the most critical deposition parameters in determining the film properties. The correlation between the deposition parameters and the electrical properties of the as-deposited DLC films was studied and discussed.
引用
收藏
页码:383 / 396
页数:14
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