Oxides;
Ab initio calculation;
Supercell;
Electronic structure;
OPTICAL-PROPERTIES;
PHOTOLUMINESCENCE;
LUMINESCENCE;
PURE;
D O I:
10.2109/jcersj2.19115
中图分类号:
TQ174 [陶瓷工业];
TB3 [工程材料学];
学科分类号:
0805 ;
080502 ;
摘要:
The electronic structure of Er-doped monoclinic ZrO2 was investigated by the generalized gradient approximation (GGA), GGA plus on-site Coulomb interaction (GGA + U) calculation, and modified Becke-Johnson (MBJ) exchange potential calculation. In the GGA calculation, the minimum bandgap energy of ZrO2 was estimated to be 3.74 eV. The valence band was mainly composed of O 2p states, which strongly hybridized with the Zr 4d states. The conduction band was composed of Zr 4d and O 2p states. When an Er atom replaced one of the Zr atoms, seven-fold Er 4f states appeared in the forbidden gap of ZrO2. Considering the spin-orbit coupling, the energy positions of the seven-fold Er 4f states in the forbidden gap hardly changed. Based on the GGA + U calculation, the Er 4f states shifted to the lower energy direction and entered into the valence band of ZrO2 with an increase in the U parameter. In addition, the MBJ calculation gave similar results using a small U parameter in the valence band energy region, while the conduction band region is similar to the GGA + U calculation result with a large U parameter. Based on these results, we concluded that the GGA calculation is the most appropriate to describe the position of Er 4f states in the bandgap of Er-doped ZrO2 phosphors among the three kinds of calculation methods examined in the present study. (C) 2019 The Ceramic Society of Japan. All rights reserved.
机构:
Sichuan Univ Arts & Sci, Coll Intelligent Mfg, Dazhou 635000, Peoples R China
Sichuan Univ Arts & Sci, Ind Technol Res Inst Intelligent Mfg, Dazhou 635000, Peoples R ChinaSichuan Univ Arts & Sci, Coll Intelligent Mfg, Dazhou 635000, Peoples R China
Chen Guang-Ping
Yang Jin-Ni
论文数: 0引用数: 0
h-index: 0
机构:
Sichuan Univ, Inst Atom & Mol Phys, Chengdu 610065, Peoples R ChinaSichuan Univ Arts & Sci, Coll Intelligent Mfg, Dazhou 635000, Peoples R China
Yang Jin-Ni
Qiao Chang-Bing
论文数: 0引用数: 0
h-index: 0
机构:
Sichuan Univ Arts & Sci, Coll Intelligent Mfg, Dazhou 635000, Peoples R China
Sichuan Univ Arts & Sci, Ind Technol Res Inst Intelligent Mfg, Dazhou 635000, Peoples R ChinaSichuan Univ Arts & Sci, Coll Intelligent Mfg, Dazhou 635000, Peoples R China
Qiao Chang-Bing
Huang Lu-Jun
论文数: 0引用数: 0
h-index: 0
机构:
Sichuan Univ Arts & Sci, Coll Intelligent Mfg, Dazhou 635000, Peoples R China
Sichuan Univ Arts & Sci, Ind Technol Res Inst Intelligent Mfg, Dazhou 635000, Peoples R ChinaSichuan Univ Arts & Sci, Coll Intelligent Mfg, Dazhou 635000, Peoples R China
Huang Lu-Jun
Yu Jing
论文数: 0引用数: 0
h-index: 0
机构:
Sichuan Univ Arts & Sci, Coll Intelligent Mfg, Dazhou 635000, Peoples R China
Sichuan Univ Arts & Sci, Ind Technol Res Inst Intelligent Mfg, Dazhou 635000, Peoples R ChinaSichuan Univ Arts & Sci, Coll Intelligent Mfg, Dazhou 635000, Peoples R China