First-principles study of electronic structure of Er-doped monoclinic ZrO2

被引:2
|
作者
Obukuro, Yuki [1 ]
Okawara, Toru [2 ]
Okuyama, Tetsuya [1 ]
机构
[1] NIT, Kurume Coll, Dept Mat Syst Engn, 1-1-1 Komorino, Kurume, Fukuoka 83041555, Japan
[2] NIT, Kitakyushu Coll, Dept Creat Engn, Mat Chem Course,Kokuraminami Ku, 5-20-1 Shii, Kitakyushu, Fukuoka 8020985, Japan
关键词
Oxides; Ab initio calculation; Supercell; Electronic structure; OPTICAL-PROPERTIES; PHOTOLUMINESCENCE; LUMINESCENCE; PURE;
D O I
10.2109/jcersj2.19115
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The electronic structure of Er-doped monoclinic ZrO2 was investigated by the generalized gradient approximation (GGA), GGA plus on-site Coulomb interaction (GGA + U) calculation, and modified Becke-Johnson (MBJ) exchange potential calculation. In the GGA calculation, the minimum bandgap energy of ZrO2 was estimated to be 3.74 eV. The valence band was mainly composed of O 2p states, which strongly hybridized with the Zr 4d states. The conduction band was composed of Zr 4d and O 2p states. When an Er atom replaced one of the Zr atoms, seven-fold Er 4f states appeared in the forbidden gap of ZrO2. Considering the spin-orbit coupling, the energy positions of the seven-fold Er 4f states in the forbidden gap hardly changed. Based on the GGA + U calculation, the Er 4f states shifted to the lower energy direction and entered into the valence band of ZrO2 with an increase in the U parameter. In addition, the MBJ calculation gave similar results using a small U parameter in the valence band energy region, while the conduction band region is similar to the GGA + U calculation result with a large U parameter. Based on these results, we concluded that the GGA calculation is the most appropriate to describe the position of Er 4f states in the bandgap of Er-doped ZrO2 phosphors among the three kinds of calculation methods examined in the present study. (C) 2019 The Ceramic Society of Japan. All rights reserved.
引用
收藏
页码:958 / 962
页数:5
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