Uniformity-improving dummy structures for deep reactive ion etching (DRIE) processes

被引：8

作者：

Jensen, S ^{[1
]}

Jensen, JM ^{[1
]}

Quaade, UJ ^{[1
]}

Hansen, O ^{[1
]}

机构：

[1] Tech Univ Denmark, MIC Dept Micro & Nanotechnol, DK-2800 Lyngby, Denmark

来源：

Micromachining and Microfabrication Process Technology X | 2005年 / 5715卷

关键词：

DRIE; uniformity; yield;

D O I：

10.1117/12.588552

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

In typical DRIE processes, the etch rate variation across the wafer increases with pattern density, severely limiting the pattern densities that can be used at a specified etch rate tolerance. Here, we present a scheme for including uniformity-improving dummy structures in the etch mask layout that enable the use of high-density patterns in many DRIE process types. The dummy structures take up relatively little space in the layout and reduce the total etch rate variation of a 35% etchable area pattern by 66% while maintaining a high etch rate.

引用

页码：39 / 46

页数：8

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