Fabrication and Irradiation Effect of Inverted Metamorphic Triple Junction GaInP/GaAs/InGaAs Solar Cells

被引：5
|
作者：
Xu, Jing [1 ]
Yang, Kunjie [2 ]
Xu, Qingguo [3 ]
Zhu, Xiaofang [3 ]
Wang, Xin [4 ]
Lu, Ming [2 ]
机构：
[1] Yantai Univ, Dept Phys, Yantai 264005, Peoples R China
[2] Yantai Univ, Coll Nucl Equipment & Nucl Engn, Yantai 264005, Peoples R China
[3] Shanghai Solar Energy Res Ctr, Shanghai 200241, Peoples R China
[4] Shanghai Inst Space Power Sources, State Key Lab Space Power Sources Technol, Shanghai 200245, Peoples R China
来源：
CRYSTALS | 2022年 / 12卷 / 05期
基金：
中国国家自然科学基金;
关键词：
irradiation effects; proton irradiation; IMM3J solar cell; efficiency; short circuit current; open circuit voltage; MEV PROTON IRRADIATION; INDUCED DEFECTS; DEGRADATION;
D O I：
10.3390/cryst12050670
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Inverted metamorphic triple junction (IMM3J) GaInP/GaAs/InGaAs solar cells have the advantages of high efficiency, excellent radiation resistance, lightweight and flexible properties, especially suitable for space application. In this paper, we first fabricate the IMM3J GaInP/GaAs/InGaAs solar cell, which has a short circuit current density of 16.5 mA/cm(2), an open circuit voltage of 3141.8 mV, a fill factor of 84.3%, and an efficiency of 32.2%. Then, the IMM3J solar cell is irradiated by 2 MeV protons with different fluences from 2 x 10(11) cm(-2) to 2 x 10(12) cm(-2). Finally, the output electrical properties of IMM3J solar cells at the beginning of life and end of life are analyzed by current-voltage characterization. The degradation behaviors of each subcell before and after irradiation can also be described by the external quantum efficiency and short circuit current density.
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页数：8
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