Calculation of the Nonlinear Absorption Coefficient of an Intense Electromagnetic Wave Caused by Confined Electrons in Doped Semiconductor Superlattices

被引：4

作者：

Tran Cong Phong ^{[1
]}

Vo Thanh Lam ^{[2
]}

Bui Dinh Hoi ^{[3
]}

机构：

[1] Hue Univ, Coll Educ, Dept Phys, Hue, Vietnam

[2] Sai Gon Univ, Dept Nat Sci, Ho Chi Minh City, Vietnam

[3] Univ Civil Engn, Hanoi, Vietnam

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2010年 / 57卷 / 05期

关键词：

Doped semiconductor superlattice; Nonlinear absorption coefficient; Electron-phonon interaction; Quantum kinetic equation; PHONON INTERACTION; QUANTUM;

D O I：

10.3938/jkps.57.1238

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

General analytic expressions for the absorption coefficient (ACF) of an intense electromagnetic wave (IEW) caused by confined electrons in doped semiconductor superlattices (DSSL) are obtained by using the quantum kinetic equation (QKE) for electrons in the case of electron-optical phonon scattering. A second-order multiphoton process is included in the result. The dependence of the ACF on the amplitude E-0 and the photon energy (h) over bar Omega of an IEW, the plasma frequency omega(p) and the temperature T for a specific DSSL of n-GaA.s/p-GaAs is achieved by using a numerical method. The computational results show that the dependence of ACF on the photon energy can be applied to optically detect the electric subbands in a DSSL.

引用

页码：1238 / 1243

页数：6