Interface state density analyzing of Au/TiO2(rutile)/n-Si Schottky barrier diode

The purpose of this study is to analyze interface states (N-ss) in Au/TiO2(Rutile)/n-Si Schottky barrier diodes (SBDs). TiO2 was deposited on a n-Si substrate by reactive magnetron sputtering and annealed at 900 degrees C for 4 h in atmosphere to obtain rutile phase. The current voltage (I-V) characteristics of SBDs were measured at room temperature. From the I-V characteristics of the SBDs ideality factor (n) and zero-bias barrier height values (phi(Bo)) 2.3 and 0.76 eV, respectively, were obtained. The N-ss distribution profile (N-ss) as a function of (E-c - E-ss) was extracted from the forward-bias I-V measurements by taking account effective barrier height and (phi(e)) and series resistance (R-s) for the Schottky diode. Nss values ranges from 4.3 x 10(12) cm(-2) eV(-1) in (E-c - 0.33) eV and 8.0 x 10(13) cm(-2) eV(-1) in (E-c - 0.33) eV. These values are better than in the literature values where TiO2 was deposited sol-gel method. The N-ss values taking into R-s were lower than without R-s. This shows that Rs should be taking account. Copyright (C) 2010 John Wiley & Sons, Ltd.