Effect of doping and polarization on carrier collection in InGaN quantum well solar cells

被引：65

作者：

Neufeld, Carl J. ^{[1
]}

Cruz, Samantha C. ^{[2
]}

Farrell, Robert M. ^{[2
]}

Iza, Michael ^{[2
]}

Lang, Jordan R. ^{[2
]}

Keller, Stacia ^{[1
]}

Nakamura, Shuji ^{[2
]}

DenBaars, Steven P. ^{[1
,2
]}

Speck, James S. ^{[2
]}

Mishra, Umesh K. ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

来源：

APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 24期

关键词：

ABSORPTION; ENERGY; GAP; INN;

D O I：

10.1063/1.3595487

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of doping and polarization on carrier collection is investigated for InGaN quantum well solar cells. Energy band diagram simulations of actual devices indicate that spontaneous and piezoelectric polarization sheet charges can inhibit carrier collection unless these charges are screened by sufficient doping. By increasing the doping on both sides of the active region, the polarization-induced barriers to carrier collection were eliminated and the short circuit current density was increased from 0.1 to 1.32 mA/cm(2) under 1.5 sun AM1.5G equivalent illumination, leading to devices with an open circuit voltage of 1.9 V and a fill factor of 71%. (C) 2011 American Institute of Physics. [doi:10.1063/1.3595487]

引用

页数：3

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