Switching reliability improvement of phase change memory with nanoscale damascene structure by Ge2Sb2Te5CMP process

被引：8
|
作者：
Zhong, M. [1 ,2 ]
Song, Z. T. [1 ]
Liu, B. [1 ]
Wang, L. Y. [1 ,2 ]
Feng, S. L. [1 ]
机构：
[1] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, Lab Nanotechnol, Shanghai 200050, Peoples R China
[2] Chinese Acad Sci, Grad Sch, Beijing, Peoples R China
来源：
ELECTRONICS LETTERS | 2008年 / 44卷 / 04期
关键词：
D O I：
10.1049/el:20082906
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Phase change memory with nanoscale damascene structure was successfully fabricated by Ge2Sb2Te5 (GST) film chemical mechanical polishing (CMP) process. An ultra-smooth surface reduced the GST/TiN contact resistance, and more homogeneous GST material composition distribution caused by the damascene structure made GST sheet resistance steady. Thus, switching reliability of the device was improved greatly compared with that of the device without CMP process owing to the reduction of device resistance fluctuation.
引用
收藏
页码：322 / 323
页数：2
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