Information reliability evaluation of a Ge2Sb2Te5-based phase change memory cell

The information reliability of phase change memory cells at different ambient temperatures has been assessed for the first time. The statistical approach chosen is based on A.N. Kolmogorov’s heuristic theory, which describes the kinetics of isothermal crystallization. We have analyzed the influence of the phase change memory cell size and critical size of crystalline nuclei, which depends on the physicochemical parameters of the material and temperature. The results demonstrate that the information reliability of phase change memory cells of typical dimensions can be sufficiently high up to 100°C. Calculation results are compared to available experimental data.