Particle detectors based on semiconducting InP epitaxial layers

被引：1
|
作者：
Yatskiv, R. [1 ]
Grym, J. [1 ]
Zdansky, K. [1 ]
机构：
[1] Acad Sci Czech Republic, Inst Photon & Elect, CR-18251 Prague 8, Czech Republic
来源：
JOURNAL OF INSTRUMENTATION | 2011年 / 6卷
关键词：
Solid state detectors; Gamma detectors (scintillators; CZT; HPG; HgI etc); Radiation-hard detectors; DOPED INDIUM-PHOSPHIDE; ELECTRICAL-PROPERTIES; SEMIINSULATING INP; CRYSTAL-GROWTH;
D O I：
10.1088/1748-0221/6/01/C01072
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
A study of electrical properties and detection performance of two types of Indium Phosphide detector structures was performed: (i) with p-n-junction and (ii) with Schottky contact prepared on high purity p-type InP. The p-n junction detectors were based on a high purity InP: Pr layers of both n- and p- type conductivity with carrier concentration on the order of 10(14) cm(-3) grown on Sn doped n-type substrate. Schottky barrier detectors were prepared by vacuum evaporation of Pd on high purity p-type epitaxial layer grown on Mn doped p-type substrate. The detection performance of particle detectors was measured by pulse-height spectra with alpha particles emitted from (241)Am source at room temperature.
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页数：6
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