Electronic transport properties of an armchair boron-nitride nanotube

被引：9

作者：

Fakhrabad, D. Vahedi ^{[2
]}

Ashhadi, M. ^{[1
]}

机构：

[1] Damghan Univ, Sch Phys, Damghan, Iran

[2] Ferdowsi Univ Mashhad, Nano Res Ctr, Mashhad, Iran

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2012年 / 44卷 / 10期

关键词：

SMALLEST CARBON NANOTUBE; QUANTUM TRANSPORT; ANGSTROM;

D O I：

10.1016/j.physe.2012.06.024

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We present a theoretical study of electron transport properties through boron-nitride nanotube (BNNT) and contrast them to those of carbon nanotube (CNT). The work is based on a tight-binding Hamiltonian model within the framework of a generalized Green's function technique and relies on the Landauer-Butikker formalism as the basis for studying the current-voltage characteristic of this system. We use an armchair single-walled BNNT in the CNT/BNNT/CNT structure. We numerically compute the transport properties in terms of transmission and current-voltage characteristic. Our calculations show that the electron transport can open a conduction gap in the CNT/BNNT/CNT structure. (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：2105 / 2109

页数：5

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