Design and Optimization of High Sensitivity Transimpedance Amplifiers in 130 nm CMOS and BiCMOS Technologies for High Speed Optical Receivers

被引：2

作者：

Ponchet, Andre F. ^{[1
]}

Bastida, Ezio M. ^{[1
]}

Panepucci, Roberto R. ^{[1
]}

Swart, Jacobus W. ^{[2
]}

Finardi, Celio ^{[1
]}

机构：

[1] Ctr Informat Technol Renato Archer, DCSH Design House, Campinas, SP, Brazil

[2] Univ Estadual Campinas, Fac Elect & Comp Engn, Campinas, SP, Brazil

来源：

2015 28TH SYMPOSIUM ON INTEGRATED CIRCUITS AND SYSTEMS DESIGN (SBCCI) | 2015年

关键词：

BiCMOS technology; transimpedance amplifiers; MMICs; mm-wave ultra wide band amplifiers; high peed ptical receivers; FRONT-END;

D O I：

10.1145/2800986.2801001

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A set of low noise transimpedance amplifiers fabricated and characterized in CMOS and BiCMOS technologies are proposed in this work. Layout optimization, efficient modeling and bias point optimization are the techniques employed to reduce the input noise current density. The CMOS amplifiers were designed to work at 10 Gbps. The BiCMOS amplifiers, based on HBT transistors, can operate at bit rates higher than 25 Gbps. At our knowledge, the broadband amplifiers proposed in this work have the lowest input noise current density compared to other 130 nm designs.

引用

页数：6

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