On the thermal oxidation of AlInN/AlN/GaN heterostructures

被引：4

作者：

Eickelkamp, Martin ^{[1
]}

Weingarten, Martin ^{[1
]}

Khoshroo, Lars Rahimzadeh ^{[1
]}

Ketteniss, Nico ^{[1
]}

Behmenburg, Hannes ^{[1
]}

Heuken, Michael ^{[1
]}

Kalisch, Holger ^{[1
]}

Jansen, Rolf H. ^{[1
]}

Vescan, Andrei ^{[1
]}

机构：

[1] Rhein Westfal TH Aachen, Chair Electromagnet Theory, D-52074 Aachen, Germany

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8 | 2011年 / 8卷 / 7-8期

关键词：

AlInN; MOSHFET; oxidation; gate leakage current; ALGAN/GAN; PERFORMANCE; THICKNESS; HFO2;

D O I：

10.1002/pssc.201000926

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this work, we report on the thermal oxidation of AlInN/AlN/GaN heterostructures. A 'nearly-native' Al2O3 oxide was formed during this procedure, which can be used as a gate oxide and thus enables the fabrication of MIS-HFET. 2DEG density and, in particular, carrier mobility are strongly affected by the thermal treatment in O-2 atmosphere. Hence, only a narrow processing window for successful thermal oxidation was identified, covering annealing temperatures between 700 degrees C and 800 degrees C and annealing durations of few minutes. Oxide thicknesses estimated to be in the range of 0.6 nm and 2.6 nm were fabricated, enabling a suppression of reverse leakage currents of MIS large-area gate diodes by up to three orders of magnitude. The resulting oxide thickness scales well with the square root of oxidation time, indicating a diffusion of oxygen atoms into the barrier. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

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页码：2213 / 2215

页数：3

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