Effects of Thermal Annealing on La2O3 Gate Dielectric of InGaZnO Thin-Film Transistor

被引：6
|
作者：
Huang, X. D. [1 ]
Song, J. Q. [2 ]
Lai, P. T. [2 ]
机构：
[1] Southeast Univ, Minist Educ, Key Lab MEMS, Nanjing 210096, Jiangsu, Peoples R China
[2] Univ Hong Kong, Dept Elect & Elect Engn, Hong Kong, Hong Kong, Peoples R China
来源：
ECS SOLID STATE LETTERS | 2015年 / 4卷 / 09期
关键词：
Surface roughness - Zinc compounds - Thin film circuits - Gallium compounds - Grain boundaries - Annealing - Gate dielectrics - Thin films - Indium compounds - Lanthanum oxides - Threshold voltage;
D O I：
10.1149/2.0011509ssl
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The effects of thermal annealing on La2O3 gate dielectric of InGaZnO thin-film transistor (TFT) are investigated by varying annealing temperature. Due to densification and enhanced moisture resistance of the La2O3 film, its surface roughness and interface with InGaZnO are improved by the thermal annealing, thus leading to significant improvement in the TFT electrical performance. However, higher-temperature (450 degrees C) annealing deteriorates the dielectric roughness and induces more traps associated with grain boundaries in the La2O3 film. The TFT with an appropriate annealing (350 degrees C) shows the best performance with smallest subthreshold swing (0.276 V/dec), lowest threshold voltage (3.01 V), highest field-effect mobility (23.2 cm(2)/V.s) and largest on-off current ratio (3.52 x 10(8)). (C) 2015 The Electrochemical Society. All rights reserved.
引用
收藏
页码：Q44 / Q46
页数：3
相关论文
共 50 条
  • [1] Effects of Ta incorporation in La2O3 gate dielectric of InGaZnO thin-film transistor
    Qian, L. X.
    Lai, P. T.
    Tang, W. M.
    [J]. APPLIED PHYSICS LETTERS, 2014, 104 (12)
  • [2] Improved Performance of InGaZnO Thin-Film Transistor With Ti Incorporation Into La2O3 Gate Dielectric
    Song, J. Q.
    Yu, Y. Q.
    Zheng, K. L.
    Su, Y. T.
    [J]. IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2021, 9 : 814 - 819
  • [3] Improved Performance of Amorphous InGaZnO Thin-Film Transistor by Hf Incorporation in La2O3 Gate Dielectric
    Song, J. Q.
    Qian, L. X.
    Lai, Peter T.
    [J]. IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2018, 18 (03) : 333 - 336
  • [4] Comparative Study of Nb2O5, NbLaO, and La2O3 as Gate Dielectric of InGaZnO Thin-Film Transistor
    Song, Jiaqi
    Han, Chuanyu
    Lai, Peter T.
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2016, 63 (05) : 1928 - 1933
  • [5] Effects of Ta incorporation in Y2O3 gate dielectric of InGaZnO thin-film transistor
    Song, J. Q.
    Qian, L. X.
    Lai, P. T.
    [J]. APPLIED PHYSICS LETTERS, 2016, 109 (16)
  • [6] Hydrogen barrier performance of sputtered La2O3 films for InGaZnO thin-film transistor
    Lee, Yujin
    Lee, Chong Hwon
    Nam, Taewook
    Lee, Sanghun
    Oh, Il-Kwon
    Yang, Joon Young
    Choi, Dong Wook
    Yoo, Choongkeun
    Kim, Ho-jin
    Kim, Woo-Hee
    Kim, Hyungjun
    [J]. JOURNAL OF MATERIALS SCIENCE, 2019, 54 (16) : 11145 - 11156
  • [7] Hydrogen barrier performance of sputtered La2O3 films for InGaZnO thin-film transistor
    Yujin Lee
    Chong Hwon Lee
    Taewook Nam
    Sanghun Lee
    Il-Kwon Oh
    Joon Young Yang
    Dong Wook Choi
    Choongkeun Yoo
    Ho-jin Kim
    Woo-Hee Kim
    Hyungjun Kim
    [J]. Journal of Materials Science, 2019, 54 : 11145 - 11156
  • [8] Fluorinated InGaZnO Thin-Film Transistor With HfLaO Gate Dielectric
    Qian, Ling Xuan
    Lai, Peter T.
    [J]. IEEE ELECTRON DEVICE LETTERS, 2014, 35 (03) : 363 - 365
  • [9] Improved Performance of Amorphous InGaZnO Thin-Film Transistor With Ta2O5 Gate Dielectric by Using La Incorporation
    Qian, L. X.
    Liu, X. Z.
    Han, C. Y.
    Lai, P. T.
    [J]. IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2014, 14 (04) : 1056 - 1060
  • [10] Structural and electrical properties of a La2O3 thin film as a gate dielectric
    Jun, JH
    Wang, CH
    Won, DJ
    Choi, DJ
    [J]. JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2002, 41 (06) : 998 - 1002
12345