A novel solution to improve saddle-shape warpage in 3D NAND flash memory

被引：12
|
作者：
Shi, Dandan [1 ,2 ,3 ]
Xia, Zhiliang [1 ,2 ,3 ]
Hu, Ming [3 ]
Mei, Guozhu [3 ]
Huo, Zongliang [1 ,2 ,3 ]
机构：
[1] Univ Chinese Acad Sci, Beijing 100049, Peoples R China
[2] Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China
[3] Yangtze Memory Technol Co Ltd, Wuhan 430205, Peoples R China
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2020年 / 35卷 / 04期
关键词：
saddle-shape warpage; backside patterning; FEM (finite element method); 3D NAND flash memory;
D O I：
10.1088/1361-6641/ab73eb
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
It is difficult to adjust asymmetrically saddle-shape wafer warpage resulted from high-stress material in 3D NAND Flash memory. This paper proposes a novel method that the suitable trenches on the backside of wafer is formed to improve saddle-shape warpage asymmetrically. Effects of different trench pitches, CDs and depths are studied by FEM (finite element method) simulation. This solution provides an instruction for solving warpage in 3D NAND flash memory manufacturing.
引用
收藏
页数：6
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