Computation Modelling on von Mises stress In Multi-Crystalline Silicon Ingot for PV Application

Numerical simulation studies have been made on multi crystalline-Silicon (mc-Si) growth by directional solidification (DS) process for Photovoltaic (PV) application. Heat transfer plays an important role in the DS process as dislocation density and growth rate are controlled by temperature gradient of the DS furnace. The heat transfer in the DS furnace is controlled by movement of side wall insulation at different velocity upto 200 mm from the bottom insulation. The simulation results show that the thermal stress in the mc-si ingot for 0.2 mm/min velocity is minimum.