Towards Coulomb drag in vertically coupled quantum wires with independent contacts

被引：4
|
作者：
Laroche, D. [1 ,2 ]
Bielejec, E. S. [1 ]
Reno, J. L. [1 ]
Gervais, G. [2 ]
Lilly, M. P. [1 ]
机构：
[1] Sandia Natl Labs, Albuquerque, NM 87185 USA
[2] McGill Univ, Dept Phys, Montreal, PQ, Canada
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2008年 / 40卷 / 05期
关键词：
quantum wires; nanostructures; Coulomb drag; vertical geometry;
D O I：
10.1016/j.physe.2007.09.175
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We report the details of design and fabrication of independently contacted, vertically coupled quantum wires using the epoxy-bond-and-stop-etch (EBASE) technique. These nanostructures are fabricated in high quality GaAs/AlGaAs parallel double quantum well heterostructures and are intended for Coulomb drag measurements of quantum wires. They will allow us to explore Coulomb drag in one-dimensional structures in a regime of small interlayer separation where the drag signal is expected to be stronger and less affected by phonon drag. (C) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码：1569 / 1572
页数：4
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