Vector corrected on-wafer measurements of noise temperature

被引:6
|
作者
Weatherspoon, MH [1 ]
Dunleavy, LP
机构
[1] Florida State Univ, Florida A&M Univ, Coll Engn, Dept Elect & Comp Engn, Tallahassee, FL 32310 USA
[2] Univ S Florida, Dept Elect Engn, Tampa, FL 33620 USA
关键词
active cold load; mismatch error; noise; noise parameters; noise temperature; noise temperature measurement; noise temperature measurement errors; radiometer;
D O I
10.1109/TIM.2005.847218
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
On-wafer noise temperature measurements are performed using receiver noise parameters for error correction. Accuracy in one-port measurements of on-wafer noise temperature made with commercial systems is demonstrated without using isolators. Equations for correcting mismatch errors are properly applied to the on-wafer environment as part of the available vector noise temperature equation. To test the measurement system, known off-wafer noise sources were used to obtain predictable on-wafer noise temperatures. These on-wafer noise temperatures were then measured and compared to predictions. Measured test results, presented for a C-band solid-state cold noise source and a pair of microwave solid-state noise diodes, are shown to be in good agreement with the predicted on-wafer noise temperature of the same sources with worst-case disagreement of 7.4 %. Measured on-wafer device under test results, presented for a microwave monolithic integrated circuit active cold load, were in good agreement with values predicted from measured forward noise parameters.
引用
收藏
页码:1327 / 1332
页数:6
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