Electrical properties of BaPb1+x-ySbyO3 ceramics derived from a modified sol-gel method

被引:3
|
作者
Lu, Yu-dong [1 ]
Wang, Xin [1 ]
Zhuang, Zhi-qiang [1 ]
机构
[1] S China Univ Technol, Coll Mat Sci & Engn, Guangzhou 510640, Peoples R China
关键词
BaPbO3; sol-gel; donor doping; PTCR; room-temperature resistiviy;
D O I
10.1007/s10832-007-9166-7
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
BaPbO3 ceramics has attracted considerable interest due to the promising electrical applications. For the best control of the microstructure and phase, Sb-doped BaPbO3 ceramics were prepared by a sol-gel route. Inorganic compounds were used as starting chemicals, citric acid and Ethylene diamine tetra-acetic acid (EDTA) as complex chelate agent, and distilled water as solvent. Experimental results demonstrate that the Sb-doped BaPbO3 ceramics with homogeneous composition could be prepared by the method mentioned above. Influence of Pb/Ba ratio and Sb concentration on the room-temperature resistivity and the PTCR behavior of BaPb1+x-ySbyO3 (x=0.0, 0.1, 0.2 and 0 <= y <= 0.2) compositions was investigated. The PTCR behavior was related to the Pb/Ba ratio and major compensating defect in BaPbO3. The lowest electrical resistivity of Sb-doped BaPbO3 was calculated to be 2.69x10(-4) Omega center dot cm when the Sb concentration y=12-13 mol%. The 0.5 mol% Sb-doped BaPbO3 showed the best PTCR behavior, and its Curie temperature is about 850 degrees C.
引用
收藏
页码:289 / 293
页数:5
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