The Effects of Growth Temperature and Substrate Tilt Angle on GaInP/GaAs Tandem Solar Cells

被引：4
|
作者：
Jun, Dong-Hwan [1 ]
Kim, Chang Zoo [1 ]
Kim, Hogyoung [2 ]
Shin, Hyun-Beom [1 ]
Kang, Ho Kwan [1 ,3 ]
Park, Won-Kyu [1 ]
Shin, Kisoo [1 ,4 ]
Ko, Chul Gi [1 ]
机构：
[1] Korea Adv Nano Fab Ctr, Dept Device Dev, Suwon, South Korea
[2] Hanbat Natl Univ, Coll Humanities & Sci, Taejon, South Korea
[3] Korea Adv Nano Fab Ctr, Patterning Proc Lab, Suwon, South Korea
[4] Korea Adv Nano Fab Ctr, Nano Proc Div, Suwon, South Korea
来源：
JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE | 2009年 / 9卷 / 02期
关键词：
Solar cell; tandem solar cell; GaAs compound semiconductor;
D O I：
10.5573/JSTS.2009.9.2.091
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The performance of GaInP/GaAs tandem solar cells with AlInP growth temperatures of 680 degrees C and 700 degrees C on n-type GaAs (100) substrate with 2 degrees and 6 degrees tilt angles has been investigated. The series resistance and open circuit voltage of the fabricated tandem solar cells are affected by the substrate tilt angles and the growth temperatures of the window layer when zinc is doped in the tunnel diode. With carbon doping as a p-type doping source in the tunnel diode and the effort of current matching between top and bottom cells, GaInP/GaAs tandem solar cell has been exhibited 25.58% efficiency.
引用
收藏
页码：91 / 97
页数：7
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