Generation of microwave-excited atmospheric-pressure line plasma and its application

被引：3

作者：

Kuwahata, Hiroshi ^{[1
]}

Miyata, Hiroshi ^{[1
]}

Isomura, Masao ^{[1
]}

Shindo, Haruo ^{[2
]}

机构：

[1] Tokai Univ, Sch Engn, Dept Elect & Elect Engn, Hiratsuka, Kanagawa 2591292, Japan

[2] Plasma Res Lab Co Ltd, Atsugi, Kanagawa 2430035, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2017年 / 56卷 / 12期

关键词：

DIELECTRIC BARRIER DISCHARGE; CORONA DISCHARGE; NONEQUILIBRIUM PLASMA; SURFACE-TREATMENT; THIN-FILMS; WATER; DEPOSITION; ACTIVATION; SILICON;

D O I：

10.7567/JJAP.56.126201

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A new 2.45 GHz microwave-excited atmospheric-pressure line plasma system was developed. An atmospheric-pressure helium (He) line plasma with a length of similar to 350 mm and a width of similar to 6 mm was generated in air at a microwave power of 1100 W. The length of the He line plasma was varied in the range of similar to 120-350 mm by changing the width of the waveguide in the microwave tube and the position of the short plunger. When a Si wafer was irradiated with the He line plasma for 10 s, the surface of the Si wafer became superhydrophilic in a belt shape. On the basis of these results, the new microwave-excited atmospheric-pressure He line plasma system was found to be effective for dry cleaning large-area surfaces, such as semiconductor substrates and glass plates used in flat-panel displays. (C) 2017 The Japan Society of Applied Physics

引用

页数：6

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