Dark current in electron irradiated GaAs/AlGaAs multiple quantum wells

被引：5
|
作者：
Donchev, V
Bourgoin, JC
Bois, P
机构：
[1] Univ Paris 06, CNRS, UMR 7603, Lab Mileux Desordonnes & Heterogenes, F-75252 Paris 05, France
[2] Thales, Cent Rech Lab, F-91404 Orsay, France
[3] Univ Sofia, Dept Condensed Matter Phys, Sofia 1164, Bulgaria
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2004年 / 517卷 / 1-3期
关键词：
GaAs/AlGaAs multiple quantum wells; electron irradiation; dark current; electron traps; activation energy;
D O I：
10.1016/j.nima.2003.09.050
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
We describe the effect of 1 MeV electron irradiation on the dark current in GaAs/AlGaAs multiple quantum wells. A linear increase of the activation energy and a linear decrease of the preexponential current term with fluence are observed. They are accounted for by irradiation introduced electron traps, which cause a negative space charge in the barriers. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码：94 / 100
页数：7
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