Investigation of plasma damage effects on characteristics and reliability of MOS devices with thin gate dielectrics

被引：2
|
作者：
Brozek, T [1 ]
Huber, J [1 ]
Walls, J [1 ]
机构：
[1] Motorola Inc, Digital DNA Labs, Ctr Integrated Syst Dev, Mesa, AZ 85202 USA
来源：
SOLID-STATE ELECTRONICS | 2001年 / 45卷 / 08期
关键词：
D O I：
10.1016/S0038-1101(00)00272-0
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Device damage due to plasma process-induced charging continues to be a great threat and concern in modern CMOS technologies. This paper investigates NMOS vs. PMOS device sensitivity to plasma charging originating from various processing steps. This dependence is studied with respect to the gate oxide thickness and large antenna devices are used to evaluate device yield, latent damage, and residual effect of charging on device performance and reliability. In addition to results obtained for oxides of 40-90 Angstrom, specific studies are performed to explore the resistance to charging damage in CMOS devices with 50 Angstrom gate oxide grown with various oxidation processes. (C) 2001 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：1299 / 1307
页数：9
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