Thermal effects in quantum dot lasers

被引：46
|
作者：
Patanè, A [1 ]
Polimeni, A
Henini, M
Eaves, L
Main, PC
Hill, G
机构：
[1] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England
[2] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England
来源：
JOURNAL OF APPLIED PHYSICS | 1999年 / 85卷 / 01期
关键词：
D O I：
10.1063/1.369417
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The thermal behavior of lasers based on In0.5Ga0.5/As/GaAs self-aggregated quantum dots is investigated. Increasing temperature from 10 to 290 K produces a narrowing of the dot laser mode distribution. This effect is explained in terms of carrier relaxation between dots and carrier thermal escape from dots to nonradiative recombination centers. The thermal dependence of the threshold current and the differential quantum efficiency is also discussed. (C) 1999 American Institute of Physics. [S0021-8979(99)03501-X].
引用
收藏
页码：625 / 627
页数：3
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