Insulating ultrathin silica films formed by a room-temperature sol-gel process

被引：0
|
作者：
Robertson, JW [1 ]
Cai, M [1 ]
Pemberton, JE [1 ]
机构：
[1] Univ Arizona, Dept Chem, Tucson, AZ 85721 USA
来源：
ADVANCED MATERIALS | 2001年 / 13卷 / 09期
关键词：
D O I：
10.1002/1521-4095(200105)13:9<662::AID-ADMA662>3.3.CO;2-R
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Sol-gel ultrathin dielectric surfaces were derived without high-temperature annealing step. The surfaces exhibit good electronic properties, high resistivities and intrinsically low capacitances.
引用
收藏
页码：662 / 667
页数：6
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