Improvement of oxygen barrier of PET film with diamond-like carbon film by plasma-source ion implantation

被引:35
|
作者
Yoshida, M
Tanaka, T
Watanabe, S
Shinohara, M
Lee, JW
Takagi, T
机构
[1] Hiroshima Inst Technol, Dept Elect & Photon Syst Engn, Saeki Ku, Hiroshima 7315193, Japan
[2] Mitsubishi Heavy Ind Co Ltd, Hiroshima Res Ctr, Nishi Ku, Hiroshima 7338553, Japan
[3] Kurita Seisakusho Co, Ujitawara, Kyoto 6100221, Japan
[4] Hallym Univ, Dept Phys, Kangwon Do 200702, South Korea
来源
SURFACE & COATINGS TECHNOLOGY | 2003年 / 174卷 / 174-175期
关键词
plasma-source ion implantation; polyethylene terepthalate; amorphous carbon;
D O I
10.1016/S0257-8972(03)00714-X
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Plasma-source ion implantation is employed to deposit amorphous carbon layers on polyethylene terepthalate (PET) film as a means of improving the oxygen barrier characteristics. This process is performed using pulsed, high negative voltage (similar to15 kV, 10 mus pulse width, 300 pulses/s) and C2H2 gas at 5.5 Pa. The effect of adding Ar or CH, to the gas mixture is also examined. The amorphous carbon layer deposited on the PET film is found to consist primarily of hydrogenated graphite crystal with minor C-H, C-H-2 and C-H-3 components, and to have the characteristics of diamond-like carbon. The film reduces the oxygen transmission rate (OTR) of the PET film by similar to150 times at a film thickness of only 290-700 nm, and is seen to decrease with decreasing ratio of the disorder peak to the graphite peak. It is predicted that there exists an optimum gas pressure to obtain the highest gas barrier at a minimal thickness using this technique. The relationships between the conditions of discharge and the OTR of the PET are also discussed. (C) 2003 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:1033 / 1037
页数:5
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