Synthesis of SrSnO3 thin films by pulsed laser deposition deposition temperature

被引：15
|
作者：
Alves, M. C. F. [1 ,2 ]
Boursicot, S. [1 ]
Ollivier, S. [1 ]
Bouquet, V. [1 ]
Deputier, S. [1 ]
Perrin, A. [1 ]
Weber, I. T. [3 ]
Souza, A. G. [2 ]
Santos, I. M. G. [2 ]
Guilloux-Viry, M. [1 ]
机构：
[1] Univ Rennes 1, Sci Chim Rennes UMR 6226, CNRS, F-35042 Rennes, France
[2] Univ Fed Paraiba, LACOM, Dept Quim, BR-58059900 Joao Pessoa, Paraiba, Brazil
[3] Univ Fed Pernambuco, Dept Quim Fundamental, BR-50740540 Recife, PE, Brazil
来源：
THIN SOLID FILMS | 2010年 / 519卷 / 02期
关键词：
Perovskite; Stannate; Pulsed laser deposition; Thin films; Epitaxial growth; MSNO3; M; CIRCUITS; BEHAVIOR; LAYER; CA; SR; BA;
D O I：
10.1016/j.tsf.2010.07.092
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
SrSnO3 thin films were prepared by pulsed laser deposition on amorphous silica and single crystal substrates of R-sapphire (100)LaAlO3 and (100)SrTiO3 High quality epitaxial (100) oriented films were obtained on LaAlO3 and SrTiO3 while a texture was revealed for films on sapphire deposited at the same deposition temperature of 700 degrees C Amorphous films were obtained on silica but a post annealing at 800 degrees C induced crystallization with a random orientation The screening of deposition temperature showed epitaxial features on SrTiO3 from 650 C while no crystallization was observed at 600 C The influence of substrate and deposition temperature was confirmed by Scanning Electron Microscopy and Atomic Force Microscopy observations (C) 2010 Elsevier B V All rights reserved
引用
收藏
页码：614 / 618
页数：5
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