Synthesis of SrSnO3 thin films by pulsed laser deposition deposition temperature

被引：15

作者：

Alves, M. C. F. ^{[1
,2
]}

Boursicot, S. ^{[1
]}

Ollivier, S. ^{[1
]}

Bouquet, V. ^{[1
]}

Deputier, S. ^{[1
]}

Perrin, A. ^{[1
]}

Weber, I. T. ^{[3
]}

Souza, A. G. ^{[2
]}

Santos, I. M. G. ^{[2
]}

Guilloux-Viry, M. ^{[1
]}

机构：

[1] Univ Rennes 1, Sci Chim Rennes UMR 6226, CNRS, F-35042 Rennes, France

[2] Univ Fed Paraiba, LACOM, Dept Quim, BR-58059900 Joao Pessoa, Paraiba, Brazil

[3] Univ Fed Pernambuco, Dept Quim Fundamental, BR-50740540 Recife, PE, Brazil

来源：

THIN SOLID FILMS | 2010年 / 519卷 / 02期

关键词：

Perovskite; Stannate; Pulsed laser deposition; Thin films; Epitaxial growth; MSNO3; M; CIRCUITS; BEHAVIOR; LAYER; CA; SR; BA;

D O I：

10.1016/j.tsf.2010.07.092

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

SrSnO3 thin films were prepared by pulsed laser deposition on amorphous silica and single crystal substrates of R-sapphire (100)LaAlO3 and (100)SrTiO3 High quality epitaxial (100) oriented films were obtained on LaAlO3 and SrTiO3 while a texture was revealed for films on sapphire deposited at the same deposition temperature of 700 degrees C Amorphous films were obtained on silica but a post annealing at 800 degrees C induced crystallization with a random orientation The screening of deposition temperature showed epitaxial features on SrTiO3 from 650 C while no crystallization was observed at 600 C The influence of substrate and deposition temperature was confirmed by Scanning Electron Microscopy and Atomic Force Microscopy observations (C) 2010 Elsevier B V All rights reserved

引用

页码：614 / 618

页数：5

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