1.3-μm continuous wave lasing of InAs quantum dots with GaInNAs covering layer on GaAs substrate grown by metal-organic chemical vapor deposition

被引：0

作者：

Kushibe, M. ^{[1
]}

Hashimoto, R. ^{[1
]}

Ezaki, M. ^{[1
]}

Managaki, N. ^{[1
]}

Hatakoshi, G. ^{[1
]}

Nishioka, M. ^{[2
,3
]}

Arakawa, Y. ^{[2
,3
]}

机构：

[1] Toshiba Co Ltd, Ctr Corp Res & Dev, Adv Elect Devices Lab, 1 Komukai,Toshiba Cho, Kawasaki, Kanagawa 2128582, Japan

[2] Univ Tokyo, Nanoelect Collaborat Res Ctr, IIS, Meguro Ku, Tokyo 1530041, Japan

[3] Univ Tokyo, RCAST, Meguro Ku, Tokyo 1530041, Japan

来源：

2007 PACIFIC RIM CONFERENCE ON LASERS AND ELECTRO-OPTICS, VOLS 1-4 | 2007年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Room-temperature continuous wave lasing in quantum dots covered with GaInNAs on GaAs substrate was attained at 1.31 mu m with threshold current density of 0.4 kA/cm(2) by metal-organic chemical vapor deposition. The range of continuous wave lasing was extended to 1.33 mu m with using a thin p-clad layer.

引用

页码：1266 / +

页数：2

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