Resonance of the Fermi velocity in weakly doped graphene

被引：13

作者：

Skrypnyk, Yu. V. ^{[1
]}

Loktev, V. M. ^{[2
]}

机构：

[1] Natl Acad Sci Ukraine, Kurdyumov Inst Met Phys, UA-03680 Kiev, Ukraine

[2] Natl Acad Sci Ukraine, Bogolyubov Inst Theoret Phys, UA-03680 Kiev, Ukraine

来源：

JETP LETTERS | 2011年 / 94卷 / 07期

基金：

瑞士国家科学基金会;

关键词：

Fermi Energy; JETP Letter; Impurity State; Dirac Point; Fermi Velocity;

D O I：

10.1134/S0021364011190167

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

It has been revealed that the dependence of the Fermi velocity on the number of charge carriers in doped graphene contains a sharp peak at which the Fermi velocity can increase by a factor of more than 1.5. It has been shown that this peak, which appears when the Fermi energy coincides with the energy of single-impurity resonance, exists when the concentration of impurities is lower than the corresponding critical concentration at which the spectrum of the system is rearranged.

引用

页码：565 / 569

页数：5

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