Resonance of the Fermi velocity in weakly doped graphene

被引：13
|
作者：
Skrypnyk, Yu. V. [1 ]
Loktev, V. M. [2 ]
机构：
[1] Natl Acad Sci Ukraine, Kurdyumov Inst Met Phys, UA-03680 Kiev, Ukraine
[2] Natl Acad Sci Ukraine, Bogolyubov Inst Theoret Phys, UA-03680 Kiev, Ukraine
来源：
JETP LETTERS | 2011年 / 94卷 / 07期
基金：
瑞士国家科学基金会;
关键词：
Fermi Energy; JETP Letter; Impurity State; Dirac Point; Fermi Velocity;
D O I：
10.1134/S0021364011190167
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
It has been revealed that the dependence of the Fermi velocity on the number of charge carriers in doped graphene contains a sharp peak at which the Fermi velocity can increase by a factor of more than 1.5. It has been shown that this peak, which appears when the Fermi energy coincides with the energy of single-impurity resonance, exists when the concentration of impurities is lower than the corresponding critical concentration at which the spectrum of the system is rearranged.
引用
收藏
页码：565 / 569
页数：5
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