Improvement of Nanotwinned Copper Thermal Stability for High Temperature Heterogeneous Integration

被引：1
|
作者：
Chiu, Wei-Lan [1 ]
Hung, Ying Tzu [1 ]
Lee, Ou-Hsiang [1 ]
Ou-Yang, Tsung Yu [1 ]
Chang, Hsiang-Hung [1 ]
Lo, Wei-Chung [1 ]
机构：
[1] Ind Technol Res Inst ITRI, Elect & Optoelect Syst Res Labs, Hsinchu, Taiwan
来源：
2021 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATIONS (VLSI-TSA) | 2021年
关键词：
D O I：
10.1109/VLSI-TSA51926.2021.9440121
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The novel nanotwinned copper material was investigated for use as an interconnect material for microelectronic packaging. It provides improved electro-migration and mechanical reliabilities versus traditional Cu interconnects. By adding low level impurities, nt-Cu can be stabilized for a thermal budget of 400 degrees C for 1h annealing. This technology is promising for high temperature heterogeneous integration.
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