Technology development for photonic integration in InP

被引：0
|
作者：
Yanson, DA [1 ]
Silver, M [1 ]
Masterton, G [1 ]
Vassalli, O [1 ]
Campbell, M [1 ]
McDougall, SD [1 ]
Marsh, JH [1 ]
机构：
[1] Intense Ltd, Glasgow G72 0BN, Lanark, Scotland
来源：
2005 International Conference on Indium Phosphide and Related Materials | 2005年
关键词：
D O I：
暂无
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
We report our development activities towards high-density photonic integrated circuits. Two key technologies, quantum well intermixing and etched turning mirrors, are demonstrated in InGaAs/InAlGaAs InP-based material at a wavelength of 1.55 microns.
引用
收藏
页码：512 / 515
页数：4
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