High contrast, ultrafast optically addressed ultraviolet light modulator based upon optical anisotropy in ZnO films grown on R-plane sapphire

被引：144
|
作者：
Wraback, M [1 ]
Shen, H
Liang, S
Goria, CR
Lu, Y
机构：
[1] USA, Res Lab, Sensors & Electron Devices Directorate, AMSRL SE EM, Adelphi, MD 20783 USA
[2] Rutgers State Univ, Coll Engn, Piscataway, NJ 08854 USA
来源：
APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 04期
关键词：
D O I：
10.1063/1.124223
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
An optically addressed ultraviolet light modulator has been demonstrated which exploits the optical anisotropy in a ZnO film epitaxially grown on (01 (1) over bar 2) sapphire. This device achieves both high contrast and high speed by exploiting the anisotropic bleaching of the anisotropic absorption and concomitant ultrafast polarization rotation near the lowest exciton resonances produced by femtosecond ultraviolet pulses. The resultant modulation is characterized by a contrast ratio of 70:1, corresponding to a dynamic polarization rotation of 12 degrees, and it decays to a quasiequilibrium value within 100 ps. (C) 1999 American Institute of Physics. [S0003-6951(99)00304-6].
引用
收藏
页码：507 / 509
页数：3
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