Optical properties of GaAs/AlAs superlattices grown on (311)A GaAs surfaces

被引：0
|
作者：
Marega, E
Oliveira, RM
Souza, CA
Arakaki, H
González-Borrero, PP
机构：
[1] USP, Dept Fis & Ciencia Mat, IFSC, BR-13560970 Sao Carlos, SP, Brazil
[2] UNICENTRO, Dept Fis, BR-85015430 Guarapuava, PR, Brazil
来源：
MICROELECTRONICS JOURNAL | 2004年 / 35卷 / 01期
关键词：
(GaAs)(5)/(AlAS)(5) superlattice; (311)A-oriented semi-insulating substrate; molecular beam epitaxy technique;
D O I：
10.1016/S0026-2692(03)00221-0
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present a temperature-dependence photoluminescence of (GaAS)(5)/(AlAs)(5) superlattice grown on (31 I)A-oriented semi-insulating substrate by molecular beam epitaxy. The temperature dependence reveals an anomalous decrease of the PL width, which is explained in terms of phonon-assisted thermal activation of localized excitons. (C) 2004 Elsevier Ltd. All rights reserved.
引用
收藏
页码：41 / 43
页数：3
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