Technology and characterization of p-i-n photodetectors with DQW (In, Ga)(As, N)/GaAs active region

Double quantum well (DQW) (In,Ga)(As,N)/GaAs p-i-n photodetectors, grown by solid source molecular beam epitaxy using a radio-frequency plasma source for nitrogen with absorption for wavelengths above 870 nm have been investigated. The active region of the photodetectors contained two very thin absorption layers: 10.5 nm Ga(As,N) (structure #DP02) or 4 nm (In,Ga)(As,N) (#DP03). In spite of this, photodetectors exhibited high sensitivity (0.0525 A/W for 980 nm) for wavelength greater than the absorption edge of GaAs (870 nm). The dark current of photodetectors did not exceed 0.1 mu A.