Synchrotron radiation photoemission study of Ge/ZnS(111) heterojunction

被引：1
|
作者：
Ban, DY [1 ]
Yang, FY [1 ]
Fang, RC [1 ]
Xu, SH [1 ]
Xu, PS [1 ]
机构：
[1] NATL SYNCHROTRON RADIAT LAB,HEFEI 230026,PEOPLES R CHINA
来源：
JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA | 1996年 / 80卷
基金：
中国国家自然科学基金;
关键词：
D O I：
10.1016/0368-2048(96)02955-6
中图分类号：
O433 [光谱学];
学科分类号：
0703 ; 070302 ;
摘要：
The band lineup at the Ge/ZnS(111) interface has been studied by synchrotron radiation photoemission spectroscopy. The experimental results indicate that the deposition of Ge films by evaporation is a two-dimensional growth at the initial stage. With the growing of Ge overlayer, surface S atoms diffuse into Ge overlayer and react with Ge atoms at the interface. We derive the valence band offsets of 1.94 +/- 0.1 eV and 2.23 +/- 0.1 eV for Ge/ZnS heterojunctions grown at 200 degrees C and room temperature, respectively. The results are in good agreement with theoretical predictions.
引用
收藏
页码：197 / 200
页数：4
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