Magnetoresistivity and magnetic properties in MgB2 thin films

Magnetotransport data on MgB2 thin films, fabricated on Al2O3 substrates using electron-bean deposition and Mg diffusion method are reported for applied magnetic fields up to 9 T. The upper critical field anisotropy, lower critical field and irreversibility field versus temperature are determined. The Hall coefficient is slightly temperature-dependent and positive in the normal state. Using the extracted data, the electronic mean free path, coherence length xi(0), anisotropic coefficient gamma and penetration depth lambda are calculated.