Dielectric reliability of 70 nm pitch air-gap interconnect structures

被引：7

作者：

Pantouvaki, Marianna ^{[1
]}

Sebaai, Farid ^{[1
]}

Kellens, Kristof ^{[1
]}

Goossens, Danny ^{[1
]}

Vereecke, Bart ^{[1
]}

Versluijs, Janko ^{[1
]}

Van Besien, Els ^{[1
]}

Caluwaerts, Rudy ^{[1
]}

Marrant, Koen ^{[1
]}

Bender, Hugo ^{[1
]}

Moussa, Alain ^{[1
]}

Struyf, Herbert ^{[1
]}

Beyer, Gerald P. ^{[1
]}

机构：

[1] IMEC, B-3000 Louvain, Belgium

来源：

MICROELECTRONIC ENGINEERING | 2011年 / 88卷 / 07期

关键词：

Air-gaps; Dielectric reliability; Low-k; Capacitance reduction;

D O I：

10.1016/j.mee.2011.03.006

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Scaling air-gap interconnects to 70 nm pitch is demonstrated for the first time by combining air-gap technology (SiO2 etch-back and non-conformal CVD) and the double patterning approach. A capacitance reduction of 45% was measured on the air-gaps compared to the SiO2 reference. The reliability performance of the air-gaps was then evaluated and it was found that the structures exceeded 10 years lifetime at 2 MV/cm, almost matching the performance of SiO2 interconnects. Air-gaps could therefore make a promising low-RC solution for future technology nodes. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：1618 / 1622

页数：5

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