High-efficiency circularly polarized green light emission from GaN-based laser diodes integrated with GaN metasurface quarterwave plate

被引:6
|
作者
Wang, Miao [1 ,2 ,3 ]
Lin, Yu [1 ,3 ]
Yi, Jue-Min [1 ,2 ,3 ]
Li, De-Yao [1 ]
Liu, Jian-Ping [1 ]
Cao, Bing [4 ]
Wang, Chin-Hua [4 ]
Wang, Jian-Feng [1 ,2 ,3 ]
Xu, Ke [1 ,2 ,3 ]
机构
[1] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion SINANO, Suzhou 215123, Peoples R China
[2] Univ Sci & Technol China, Sch Nanotech & Nanobion, Suzhou 215123, Peoples R China
[3] Suzhou Inst Nanotech & Nanobion, CAS Key Lab Nanophoton Mat & Devices, Suzhou 215123, Peoples R China
[4] Soochow Univ, Sch Optoelect Sci & Engn, Suzhou 215006, Peoples R China
基金
国家重点研发计划;
关键词
ENERGY-EFFICIENT;
D O I
10.1063/5.0067396
中图分类号
O59 [应用物理学];
学科分类号
摘要
We demonstrated high efficient circularly polarized emission from the InGaN/GaN quantum well green laser diode (LD) integrated with GaN metasurface quarterwave plates. Optical properties of the nanoscale thin GaN nanograting metasurface were numerically studied and optimized for a quarter-wave plate. The fabricated nanogratings then were integrated on the emission facet of the LD. Both conversion efficiency and the polarization state of the device were measured, and the conversion efficiency is around 80% while the degree of circular polarization is maintained around 0.99. Our results of achieving a high degree of polarization and a high conversion efficiency at the integrated LD device pay the way for multi-functional applications in bio-imaging, submarine optical communication, quantum communication, and holographic display.
引用
收藏
页数:6
相关论文
共 50 条
  • [21] GaN-Based Light-Emitting Diodes: Efficiency at High Injection Levels
    Ozgur, Umit
    Liu, Huiyong
    Li, Xing
    Ni, Xianfeng
    Morkoc, Hadis
    PROCEEDINGS OF THE IEEE, 2010, 98 (07) : 1180 - 1196
  • [22] GaN-based high-power laser diodes
    Miyajima, T
    Yoshida, H
    Yanashima, K
    Yamaguchi, T
    Asatsuma, T
    Funato, K
    Hashimoto, S
    Nakajima, H
    Ozawa, M
    Kobayashi, T
    Tomiya, S
    Asano, T
    Uchida, S
    Kijima, S
    Tojyo, T
    Hino, T
    Ikeda, M
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2001, 82 (1-3): : 248 - 252
  • [23] Design and growth of GaN-based blue and green laser diodes
    Tian, Aiqin
    Hu, Lei
    Zhang, Liqun
    Liu, Jianping
    Yang, Hui
    SCIENCE CHINA-MATERIALS, 2020, 63 (08) : 1348 - 1363
  • [24] Improvement of extraction efficiency for GaN-based light emitting diodes
    SU YanKuin
    CHEN JianJhong
    KAO ChienChih
    TSAI ChunFu
    Science China(Technological Sciences), 2010, (02) : 322 - 325
  • [25] Improvement of extraction efficiency for GaN-based light emitting diodes
    Su YanKuin
    Huang ChunYuan
    Chen JianJhong
    Kao ChienChih
    Tsai ChunFu
    SCIENCE CHINA-TECHNOLOGICAL SCIENCES, 2010, 53 (02) : 322 - 325
  • [26] Improvement of extraction efficiency for GaN-based light emitting diodes
    YanKuin Su
    ChunYuan Huang
    JianJhong Chen
    ChienChih Kao
    ChunFu Tsai
    Science China Technological Sciences, 2010, 53 : 322 - 325
  • [27] Improvement of extraction efficiency for GaN-based light emitting diodes
    SU YanKuin
    HUANG ChunYuan
    CHEN JianJhong
    KAO ChienChih
    TSAI ChunFu
    中国科学:技术科学, 2010, (02) : 205 - 205
  • [28] Improvement of extraction efficiency for GaN-based light emitting diodes
    SU YanKuin
    CHEN JianJhong
    KAO ChienChih
    TSAI ChunFu
    Science China(Technological Sciences), 2010, 53 (02) : 322 - 325
  • [29] Midinfrared emission from InGaN/GaN-based light-emitting diodes
    Hofstetter, D
    Faist, J
    Bour, DP
    APPLIED PHYSICS LETTERS, 2000, 76 (12) : 1495 - 1497
  • [30] GaN-based laser diodes emitting from ultraviolet to blue-green.
    Nagahama, S
    Sano, M
    Yanamoto, T
    Morita, D
    Miki, O
    Sakamoto, K
    Yamamoto, M
    Matsuyama, Y
    Kawata, Y
    Murayama, T
    Mukai, T
    NOVEL IN-PLANE SEMICONDUCTOR LASERS II, 2003, 4995 : 108 - 116