5Gb/s optical logic AND operations using by monolithically integrated photodiode and electroabsorption modulator

被引：0
|
作者：
Zhang, Y. X. [1 ]
Zhao, L. J. [1 ]
Niu, B. [1 ]
Pan, J. Q. [1 ]
Wang, W. [1 ]
机构：
[1] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
来源：
OPTICAL MODELLING AND DESIGN | 2010年 / 7717卷
关键词：
optical logic element; evanescent waveguide uni-traveling-carrier photodiode; intra-step quantum well electro-absorption modulator;
D O I：
10.1117/12.854109
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A novel EAM/PD monolithically-integrated optical logic element is presented. 5Gb/s optical logic AND gate operations at about -2 V for non-return-to-zero (NRZ) signals with8.4dB extinction ratio and 16m W absorbed optical power was demonstrated.
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页数：6
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