10.7 Gb/s reflective electroabsorption modulator monolithically integrated with semiconductor optical amplifier for colorless WDM-PON

被引:20
|
作者
Kim, Hyun-Soo [1 ]
Kim, Dong Churl [1 ]
Kim, Ki-Soo [1 ]
Choi, Byung-Seok [1 ]
Kwon, O-Kyun [1 ]
机构
[1] ETRI, Photon Wireless Convergence Components Dept, Taejon 305700, South Korea
来源
OPTICS EXPRESS | 2010年 / 18卷 / 22期
关键词
BANDWIDTH; RSOA;
D O I
10.1364/OE.18.023324
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We demonstrated 10.7 Gb/s reflective electroabsorption modulator monolithically integrated with semiconductor optical amplifier (REAM-SOA) using simplified fabrication process. Good performance at 10.7 Gb/s was obtained with an extinction ratio of > 10 dB and a power penalty of < 1 dB at a 10(-9) bit error rate (BER) up to 20 km transmission. The device operated over a 50 nm spectral range within 1 dB received power variation at a 10(-9) BER. (C) 2010 Optical Society of America
引用
收藏
页码:23324 / 23330
页数:7
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