GROWTH AND CHARACTERIZATION OF INGAN FOR PHOTOVOLTAIC DEVICES

被引：0

作者：

Boney, C. ^{[1
,2
]}

Hernandez, I. ^{[1
]}

Pillai, R. ^{[2
]}

Starikov, D. ^{[1
,2
]}

Bensaoula, A. ^{[2
,3
]}

Henini, M. ^{[4
]}

Syperek, M. ^{[5
]}

Misiewicz, Jan ^{[5
]}

Kudrawiec, R. ^{[5
]}

机构：

[1] Integrated Micro Sensors Inc, Houston, TX 77096 USA

[2] Univ Houston, Dept Phys, Nitride Mat & Devices Lab, Houston, TX 77004 USA

[3] Univ Houston, Dept Elect & Comp Engn, Nitride Mat & Devices Lab, Houston, TX 77004 USA

[4] Univ Nottingham, Sch Phys & Astron, Nottingham Nanotechnol & Nanosci Ctr, Nottingham NG7 2RD, England

[5] Wroclaw Univ Technol, Inst Phys, PL-50370 Wroclaw, Poland

来源：

35TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE | 2010年

关键词：

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

In this work we present the growth and characterization of InxGa1-xN-based materials and solar cells with x up to 0.54. Growth of single phase InxGa1-xN is achieved using Plasma Assisted Molecular Beam Epitaxy (PAMBE) with flux modulation for active species. The material is characterized by x-ray diffraction, electrochemical capacitance-voltage, time-resolved photo-luminescence, and contactless electroreflectance. Fabricated devices are then studied for photo-response under simulated AM0 spectral conditions to evaluate solar cell characteristics. The dark and illuminated J-V results indicate the existence of significant shunt and series resistances arising from material defects and non-optimized device design.

引用

页数：1

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