GROWTH AND CHARACTERIZATION OF INGAN FOR PHOTOVOLTAIC DEVICES

被引：0

作者：

Boney, C. ^{[1
,2
]}

Hernandez, I. ^{[1
]}

Pillai, R. ^{[2
]}

Starikov, D. ^{[1
,2
]}

Bensaoula, A. ^{[2
,3
]}

Henini, M. ^{[4
]}

Syperek, M. ^{[5
]}

Misiewicz, Jan ^{[5
]}

Kudrawiec, R. ^{[5
]}

机构：

[1] Integrated Micro Sensors Inc, Houston, TX 77096 USA

[2] Univ Houston, Dept Phys, Nitride Mat & Devices Lab, Houston, TX 77004 USA

[3] Univ Houston, Dept Elect & Comp Engn, Nitride Mat & Devices Lab, Houston, TX 77004 USA

[4] Univ Nottingham, Sch Phys & Astron, Nottingham Nanotechnol & Nanosci Ctr, Nottingham NG7 2RD, England

[5] Wroclaw Univ Technol, Inst Phys, PL-50370 Wroclaw, Poland

来源：

35TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE | 2010年

关键词：

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

In this work we present the growth and characterization of InxGa1-xN-based materials and solar cells with x up to 0.54. Growth of single phase InxGa1-xN is achieved using Plasma Assisted Molecular Beam Epitaxy (PAMBE) with flux modulation for active species. The material is characterized by x-ray diffraction, electrochemical capacitance-voltage, time-resolved photo-luminescence, and contactless electroreflectance. Fabricated devices are then studied for photo-response under simulated AM0 spectral conditions to evaluate solar cell characteristics. The dark and illuminated J-V results indicate the existence of significant shunt and series resistances arising from material defects and non-optimized device design.

引用

页数：1

共 50 条

[1] Growth and characterization of InGaN for photovoltaic devices
Boney, C.
Hernandez, I.
Pillai, R.
Starikov, D.
Bensaoula, A.
Henini, M.
Syperek, M.
Misiewicz, J.
Kudrawiec, R.
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8, 2011, 8 (7-8): : 2460 - 2462
[2] Characterization and analysis of InGaN photovoltaic devices
Jani, O
Honsberg, C
Asghar, A
Nicol, D
Ferguson, I
Doolittle, A
Kurtz, S
CONFERENCE RECORD OF THE THIRTY-FIRST IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 2005, 2005, : 37 - 42
[3] FABRICATION AND CHARACTERIZATION OF 2.3eV INGAN PHOTOVOLTAIC DEVICES
Misra, P.
Boney, C.
Medelci, N.
Starikov, D.
Freundlich, A.
Bensaoula, A.
PVSC: 2008 33RD IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE, VOLS 1-4, 2008, : 1380 - +
[4] Characterization of InGaN-based photovoltaic devices by varying the indium contents
Huang, Chien-Fei
Hsieh, Wen-Yang
Hsieh, Bing-Cheng
Hsieh, Chang-Hua
Lin, Chia-Feng
THIN SOLID FILMS, 2013, 529 : 278 - 281
[5] INGAN DEVICES FOR HIGH TEMPERATURE PHOTOVOLTAIC APPLICATIONS
Boney, C.
Hernandez, I.
Pillai, R.
Starikov, D.
Bensaoula, A.
35TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE, 2010, : 2522 - 2527
[6] Low-temperature pulsed sputtering growth of InGaN multiple quantum wells for photovoltaic devices
Arakawa, Yasuaki
Ueno, Kohei
Noguchi, Hidenari
Ohta, Jitsuo
Fujioka, Hiroshi
JAPANESE JOURNAL OF APPLIED PHYSICS, 2017, 56 (03)
[7] High quality thick InGaN nanostructures grown by nanoselective area growth for new generation photovoltaic devices
Sundaram, Suresh
Puybaret, Renaud
Li, Xin
El Gmili, Youssef
Streque, Jeremy
Panztas, Konstantinos
Orsal, Gaelle
Patriarche, Gilles
Voss, Paul L.
Salvestrini, Jean Paul
Ougazzaden, Abdallah
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2015, 212 (04): : 740 - 744
[8] Growth and characterization of AlInGaN/InGaN heterostructures
Roberts, JC
McIntosh, FG
Aumer, M
Joshkin, V
Boutros, KS
Piner, EL
He, YW
ElMasry, NA
Bedair, SM
III-NITRIDE, SIC AND DIAMOND MATERIALS FOR ELECTRONIC DEVICES, 1996, 423 : 341 - 346
[9] Computational characterization of organic photovoltaic devices
Shang, Yuan
Li, Qikai
Meng, Lingyi
Wang, Dong
Shuai, Zhigang
THEORETICAL CHEMISTRY ACCOUNTS, 2011, 129 (3-5) : 291 - 301
[10] CHARACTERIZATION OF INDOOR PHOTOVOLTAIC DEVICES AND LIGHT
Mueller, M.
Wienold, J.
Walker, W. D.
Reindl, L. M.
2009 34TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE, VOLS 1-3, 2009, : 491 - +

← 1 2 3 4 5 →