Crystallization of hydrogenated amorphous silicon by rapid thermal method

被引：1
|
作者：
Jin, Ruimin [1 ,2 ]
Li, Dingzhen [1 ]
Chen, Lan-li [1 ]
Guo, Xinfeng [1 ]
Lu, Jingxiao [2 ]
机构：
[1] Nanyang Inst Technol, Nanyang 473004, Henan, Peoples R China
[2] Zhengzhou Univ, Minist Educ, Key Lab Mat Phys, Zhengzhou 450052, Peoples R China
来源：
ADVANCES IN LIQUID CRYSTALS | 2010年 / 428-429卷
关键词：
PECVD; a-Si: H film; rapid thermal annealing; POLY-SI;
D O I：
10.4028/www.scientific.net/KEM.428-429.444
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Amorphous silicon films prepared by PECVD on silex glass substrate has been crystallized by rapid thermal annealing (RTA), From the Raman spectra and scanning electronic microscope (SEM), it was found that the Raman spectra wa best crystallized at 950 degrees C for 5 min. The thin film made by RTA was smoothly and perfect structure.
引用
收藏
页码：444 / +
页数：2
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